InN Nanowires: Growth and Optoelectronic Properties
نویسندگان
چکیده
منابع مشابه
InN Nanowires: Growth and Optoelectronic Properties
An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.
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ژورنال
عنوان ژورنال: Materials
سال: 2012
ISSN: 1996-1944
DOI: 10.3390/ma5112137